UT62V25616(I) データシートの表示（PDF） - Utron Technology Inc
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UT62V25616(I) Datasheet PDF : 12 Pages
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Rev. 1.1
UTRON
UT62V25616(I)
256K X 16 BIT LOW POWER CMOS SRAM
WRITE CYCLE 1 ( WE Controlled) (1,2,3,5)
t WC
Address
t AW
CE
t CW
t AS
t WR
t WP
WE
LB , UB
Dout
Din
t BW
t WHZ
(4)
High-Z
t DW
t OW
(4)
t DH
Data Valid
WRITE CYCLE 2 ( CE Controlled) (1,2,5)
t WC
Address
CE
t AS
t AW
t CW
t WR
WE
t WP
LB , UB
t BW
Dout
t WHZ
High-Z
t DW
t DH
Din
Data Valid
Notes :
1. WE or CE must be HIGH during all address transitions.
2. A write occurs during the overlap of a low CE and a low WE .
3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the drivers to turn off and data
to be placed on the bus.
4. During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the CE LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a
high impedance state.
6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
6
P80067
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