MPSA77 データシートの表示（PDF） - Fairchild Semiconductor
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MPSA77 Datasheet PDF : 3 Pages
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MPSA77
PNP Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 800mA.
• Sourced from process 61.
1
TO-92
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
1. Emitter 2. Base 3. Collector
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
-60
V
VCBO
Collector-Base Voltage
-60
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current
- Continuous
-1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IC = -100µA, IB = 0
VCB = -30V, IE = 0
VEB = -10V, IC = 0
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics *
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, IB = -0.1mA
IC = -100mA, VCE = -5.0mA
fT
Current Gain Dandwidth Product
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
IC = -10mA, VCE = -5.0V
f = 100MHz
Min. Max. Units
-60
V
-100 nA
-100 nA
10,000
10,000
-1.5
V
-2.0
V
100
MHz
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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