4N35-220 データシートの表示（PDF） - Inchange Semiconductor
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4N35-220 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
4N35
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=1mA
IS=4A ;VGS= 0
VGS= 10V; ID=2A
VGS= ±30V;VDS= 0
VDS= 350V; VGS= 0
MIN TYPE MAX UNIT
350
V
2.0
4.0
V
1.4
V
2.0
Ω
±100 nA
10
µA
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