MRF1001A データシートの表示（PDF） - Advanced Semiconductor

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MRF1001A

NPN SILICON HIGH FREQUENCY TRANSISTOR

Advanced Semiconductor 

MRF1001A

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION:

The ASI MRF1001A is a High

Frequency Transistor Designed for

Amplifier and Oscillator Applications.

MAXIMUM RATINGS

IC

200 mA

VCE

20 V

PDISS

1.0 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +200 °C

θJC

175 °C/W

PACKAGE STYLE TO-39

1 = Emitter 2 = Base

3 = Collector

NONE

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

BVCEO

IC = 5.0 mA

BVCBO

IC = 1.0 mA

BVEBO

IC = 100 µA

ICBO

VCB = 10 V

IEBO

VEB = 3.5 V

hFE

VCE = 5.0 V

IC = 50 mA

VCE(SAT)

IC = 50 mA

IB = 10 mA

MINIMUM

20

30

3.5

50

ft

VCE = 14 V

IC = 90 mA

f = 300 MHz

GUmax

MAG

VCC = 14 V

f = 300 MHz

IC = 90 mA

Pout = 1.0 W

|S21|2

10

TYPICAL MAXIMUM

50

100

300

100

3.0

11.5

11.7

11.13

UNITS

V

V

V

µA

µA

---

V

GHz

dB

dB

dB

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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