MMFT1N10ET3 データシートの表示（PDF） - Motorola => Freescale
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MMFT1N10ET3 Datasheet PDF : 10 Pages
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MMFT1N10E
VGS
1400
Ciss
1200
Crss
1000
VDS
TJ = 25°C
Coss
f = 1 MHz
800
600
Ciss
400
200
Coss
Crss
0 20 15 10
5
0
5 10 15 20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation With Voltage
10
VDS = 50 V
VDS = 80 V
8
6
4
TJ = 25°C
2
ID = 1 A
VGS = 10 V
00
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Figure 15. Gate Charge versus Gate–To–Source Voltage
+18 V
1 mA
47 k
Vin 15 V
2N3904
100 k
2N3904
47 k
VDD
10 V 100 k
0.1 µF
SAME
DEVICE TYPE
AS DUT
FERRITE
100 BEAD
DUT
Vin = 15 Vpk; PULSE WIDTH ≤ 100 µs, DUTY CYCLE ≤ 10%.
Figure 16. Gate Charge Test Circuit
6
Motorola TMOS Power MOSFET Transistor Device Data
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