SPA-2318Z データシートの表示（PDF） - Sirenza Microdevices => RFMD

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SPA-2318Z

1700-2200 MHz 1 Watt Power Amp with Active Bias

Sirenza Microdevices => RFMD 

Product Description

Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs

Heterojunction Bipolar Transistor (HBT) amplifier housed in a

low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial growth

technology which produces reliable and consistent performance

from wafer to wafer and lot to lot.

SPA-2318

SPA-2318Z Pb RoHS Compliant

Prelim& iGnraeernyPackage

1700-2200 MHz 1 Watt Power Amp

with Active Bias

This product is specifically designed for use as a driver amplifier

for infrastructure equipment in the 1960 and 2140 MHz bands. Its

high linearity makes it an ideal choice for multi-carrier and digital

applications.

Product Features

The matte tin finish on Sirenza’s lead-free package utilizes a post • Now available in Lead Free, RoHS

annealing process to mitigate tin whisker formation and is RoHS

compliant per EU Directive 2002/95. This package is also manu-

factured with green molding compounds that contain no antimony

trioxide nor halogenated fire retardants.

Compliant, & Green Packaging

• High Linearity Performance:

+21 dBm IS-95 Channel Pwr at -55 dBc ACP

+20.7 dBm W-CDMA Channel Pwr at -50dBc ACP

+47 dBm Typ. OIP3

VC1

• On-chip Active Bias Control

• High Gain: 24 dB Typ. at 1960 MHz

VBIAS

RFIN

Active

Bias

RFOUT/

VC2

• Patented High Reliability GaAsHBT Technology

• Surface-Mountable Plastic Package

Applications

• W-CDMA Systems

VPC2

• PCS Systems

• Multi-Carrier Applications

Symbol

Parameters: Test Conditions:

Z0 = 50 Ohms Temp = 25ºC, Vcc = 5.0V

f0

Frequency of Operation

P1dB Output Power at 1dB Compression[1]

f = 1960 MHz

f = 2140 MHz

U n its

MHz

dBm

Min.

1700

Typ.

29.5

29.5

Max.

2200

ACP

S 21

Adjacent Channel Power [1]

IS-95 @ POUT = 21.0 dBm

W-C DMA @ POUT = 20.7 dBm

Small S ignal Gain [1,2]

f = 1960 MHz

dBc

f = 2140 MHz

f = 1960 MHz

f = 2140 MHz

dB

22.5

-55.0

-50.0

24.0

23.5

-47.0

25.0

VS WR Input VSWR [1,2]

f = 1960 MHz

-

f = 2140 MHz

-

1.6:1

1.6:1

OIP 3

Output Third Order Intercept Point [2]

Power out per tone = +14dBm

f = 1960 MHz

f = 2140 MHz

dBm

46.5

47.0

NF

Noise Figure [1,2]

f = 1960 MHz

f = 2140 MHz

dB

5.5

5.5

ICC

Device C urrent [1,2]

Ibias = 10 mA

Ic1 = 70 mA

mA

360

400

425

Ic2 = 320 mA

VCC

Device Voltage [1,2]

V

4.75

5.0

5.25

Rth j-l Thermal Resistance (junction - lead), TL = 85ºC

ºC /W

31

[1] Optimal ACP tune

[2] Optimal IP3 tune

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights

reserved.

303 S. Technology Court, Broomfield, CO 80021

Phone: (800) SMI-MMIC

1

http://www.sirenza.com

EDS-101432 Rev H

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