NCP1616 データシートの表示（PDF） - ON Semiconductor
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NCP1616 Datasheet PDF : 36 Pages
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NCP1616
Table 5. ELECTRICAL CHARACTERISTICS (VCC = 15 V, VHV = 120 V, VFB = 2.4 V, CVControl = 10 nF, VFFcontrol = 2.6 V, VZCD/CS
= 0 V, VSTDBY/FAULT = 1 V, CDRV = 1 nF, for typical values TJ = 25°C, for min/max values, TJ is −40°C to 125°C, unless otherwise noted)
Characteristics
Conditions
Symbol
Min
Typ
Max Unit
CURRENT SENSE
Leading Edge Blanking Duration
Current Limit Propagation Delay
Step VCS/ZCD > VILIM to DRV
falling edge
tOCP(LEB)
100
200
350
ns
tOCP(delay)
–
40
200
ns
Overstress Leading Edge Blanking Duration
tOVS(LEB)
50
100
170
ns
Over Stress Detection Propagation Delay
VCS/ZCD > VZCD(rising) to DRV
tOVS(delay)
–
falling edge
40
200
ns
REGULATION BLOCK
Reference Voltage
Error Amplifier Current
Source
Sink
Open Loop Error Amplifier Transconduc-
tance
TJ = 25°C
TJ = −40 to 125°C
VFB = 2.4 V, VVControl = 2 V
VFB = 2.6 V, VVControl = 2 V
VFB = VREF +/− 100 mV
VREF
VREF
IEA(SRC)
IEA(SNK)
gm
2.475 2.500 2.525 V
2.445 2.500 2.550
16
20
24
mA
16
20
24
180
210
245
mS
Maximum Control Voltage
Minimum Control Voltage
EA Output Control Voltage Range
DRE Detect Threshold
DRE Threshold Hysteresis
Ratio between the DRE Detect Threshold
and the Regulation Level
VFB = 2 V
VControl(MAX)
–
4.5
–
V
VFB = 2.6 V
VControl(MIN)
–
0.5
–
V
VControl(MAX) − VControl(MIN)
DVControl
3.85
4.0
4.1
V
VFB decreasing
VDRE
–
2.388
–
V
VFB increasing
VDRE(HYS)
–
–
25
mV
VFB decreasing, VDRE / VREF
KDRE
95.0
95.5
96.0
%
Control Pin Source Current During Start−Up
EA Boost Current During Start−Up
Control Pin Source Current During DRE
EA Boost Current During DRE
PFC GATE DRIVE
VVControl = 2 V
VVControl = 2 V
IControl(start−up)
80
100
113
mA
Iboost(start−up)
–
80
–
mA
IControl(DRE)
180
220
250
mA
Iboost(DRE)
–
200
–
mA
Rise Time (10−90%)
Fall Time (90−10%)
Source Current Capability
Sink Current Capability
High State Voltage
Low Stage Voltage
ZERO CURRENT DETECTION
VDRV from 10 to 90% of VDRV
tDRV(rise)
–
90 to 10% of VDRV
tDRV(fall)
–
VDRV = 0 V
IDRV(SRC)
−
VDRV = 12 V
IDRV(SNK)
−
VCC = VCC(off) + 0.2 V,
RDRV = 10 kW
VCC = 28 V, RDRV = 10 kW
VDRV(high1)
8
VDRV(high2)
10
VSTDBY = 0 V
VDRV(low)
–
40
80
ns
20
60
ns
500
−
mA
800
−
mA
–
–
V
12
14
–
0.25
V
Zero Current Detection Threshold
ZCD and Current Sense Ratio
Positive Clamp Voltage
CS/ZCD Input Bias Current
ZCD Propagation Delay
Minimum detectable ZCD Pulse Width
VCS/ZCD rising
VCS/ZCD falling
VZCD(rising)
675
750
825 mV
VZCD(falling)
200
250
300
VZCD(rising)/VILIM
KZCD/ILIM
1.4
1.5
1.6
–
ICS/ZCD = 0.75 mA
ICS/ZCD = 5 mA
VCS/ZCD(MAX1) 7.1
7.4
7.8
V
VCS/ZCD(MAX2) 15.4
15.8
16.1
VCS/ZCD = VZCD(rising)
VCS/ZCD = VZCD(falling)
ICS/ZCD(bias1)
0.5
–
2.0
mA
ICS/ZCD(bias2)
0.5
–
2.0
Measured from VCS/ZCD =
VZCD(falling) to DRV rising
tZCD
–
60
200
ns
Measured from VZCD(rising) to
VZCD(falling)
tSYNC
–
110
200
ns
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