NCV8851-1DBR2G データシートの表示（PDF） - ON Semiconductor
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NCV8851-1DBR2G Datasheet PDF : 18 Pages
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NCV8851−1
ELECTRICAL CHARACTERISTICS
(−40°C < TJ < 150°C, 4.5 V < VIN < 40 V, 4.5 V < BST < 46 V, ROSC = 51.1 kW, unless otherwise specified)
Characteristic
Conditions
Min
Typ
Max
Unit
CURRENT ERROR AMPLIFIER
DC Gain
Guaranteed by Design
70
73
−
dB
Gain−Bandwidth Product
Guaranteed by Design
8.0
10
−
MHz
Charge Currents
FB Bias Current
Source, CCOMP = 1.75 V
Sink, CCOMP = 1.75 V
Guaranteed by Design
2
4
−
mA
1.3
3
−
mA
−
0.1
1.0
mA
Clamping Voltage
2.7
3.5
−
V
CURRENT LIMIT
Average Current Limit Threshold
1.2 V ≤ CSN ≤ 10.0 V
80
100
125
mV
Cycle−by−Cycle Current Limit
Threshold Voltage
115
165
215
mV
Cycle−by−Cycle Current Limit
Response Time
Guaranteed by Design
−
200
−
ns
Cycle−by−Cycle and Average Cur-
rent Limit Threshold Difference
20
−
−
mV
SYNC
SYNC Frequency Range
SYNC Pin Bias Current
SYNC Threshold Voltage
VSYNC = 0 V
VSYNC = 5.0 V
Logic Low
Logic High
FSW
−
600
kHz
−
0.1
0.2
mA
−
10
20
−
−
0.8
V
2.0
−
−
6.0 V LDO
Output Voltage
Dropout Voltage
Current Limit
IOUT = 20 mA
IOUT = 20 mA
5.8
6.0
6.2
V
−
−
200
mV
30
75
120
mA
GATE DRIVERS
GH Sink Current
GH Source Current
GL Sink Current
GL Source Current
VGH = 2 V, VIN_IC = 6 V, Guaranteed by Design
−
VGH = 4 V, VIN_IC = 6 V, Guaranteed by Design
−
VIN_IC = 6 V
−
VGL = 1.0 V
Guaranteed by Design
−
1.5
−
A
1.5
−
A
1.5
−
A
1.5
−
A
GH to GL Delay
GL to GH Delay
SOFT START
VIN = 13.2 V
VIN = 13.2 V
−
40
70
ns
−
40
70
ns
Time
ENABLE (EN)
FSW = 170 kHz
−
14
−
ms
Input Threshold
Logic Low
Logic High
−
−
0.8
V
2.0
−
−
Input Current
EN = 2.0 V
−
3.0
10
mA
Minimum Disable Time
−
−
20
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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