APM3040NDC-TR データシートの表示（PDF） - Anpec Electronics

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APM3040NDC-TR

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM3040ND

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

300µs Pulsed Drain Current

Diode Continuous Forward Current

VGS=10V

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD*

Power Dissipation for Single Operation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

30

±12

3

12

1

150

-55 to 150

1.47

0.58

85

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

IDSS Zero Gate Voltage Drain Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VGS=0V, IDS=250µA

VDS=24V, VGS=0V

TJ=85°C

VDS=VGS, IDS=250µA

VGS=±12V, VDS=0V

VGS=10V, IDS=3A

VGS=4.5V, IDS=1.5A

VGS=2.5V, IDS=0.5A

ISD=0.5A , VGS=0V

VDS=15V, VGS=10V,

IDS=3A

APM3040ND

Unit

Min. Typ. Max.

30

V

1

µA

30

0.6 0.75 1.5 V

±100 nA

31 40

35 50 mΩ

55 70

0.7 1.3 V

18 23

2.5

nC

2

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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