APM3040NDC-TR データシートの表示（PDF） - Anpec Electronics

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APM3040NDC-TR

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM3040ND

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Dynamic Characteristics b

RG Gate Resistance

VGS=0, VDS=0, F=1MHz

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS=0V,

VDS=25V,

Frequency=1.0MHz

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

VDD=15V, RL=15Ω,

IDS=1A, VGEN=10V,

RG=6Ω

Tf Turn-off Fall Time

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

APM3040ND

Unit

Min. Typ. Max.

1.5

Ω

430

80

pF

40

11 21

17 32

ns

37 68

20 38

Copyright  ANPEC Electronics Corp.

3

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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