BF621 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
BF621 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
PNP high-voltage transistors
Product specification
BF621; BF623
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
100
K/W
20
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
Cre
fT
collector cut-off current
IE = 0; VCB = −200 V
−
IE = 0; VCB = −200 V; Tj = 150 °C
−
emitter cut-off current
IC = 0; VEB = −5 V
−
DC current gain
IC = −25 mA; VCE = −20 V
50
collector-emitter saturation voltage IC = −30 mA; IB = −5 mA
−
feedback capacitance
IC = ic = 0; VCE = −30 V; f = 1 MHz
−
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz 60
MAX.
−10
−10
−50
−
−800
1.6
−
UNIT
nA
µA
nA
mV
pF
MHz
1999 Apr 21
3
Share Link: 