IDT71T016SA10BFI データシートの表示（PDF） - Integrated Device Technology

部品番号

コンポーネント説明

メーカー

IDT71T016SA10BFI

2.5V CMOS Static RAM 1 Meg (64K x 16-Bit)

Integrated Device Technology 

IDT71T016SA, 2.5V CMOS Static RAM

1 Meg (64K x 16-Bit)

Commercial and Industrial Temperature Ranges

Absolute Maximum Ratings(1)

Recommended Operating

Symbol

Rating

Value

Unit Temperature and Supply Voltage

VDD

Supply Voltage Relative

–0.3 to +3.6

V

to VSS

VIN, VOUT Terminal Voltage Relative –0.3 to VDD+0.3

V

to VSS

TBIAS

Temperature Under Bias

–55 to +125

oC

Grade

Commercial

Industrial

Temperature

0°C to +70°C

-40°C to +85°C

VSS

VDD

0V

See Below

0V

See Below

5326 tbl 04

TSTG

Storage Temperature

PT

Power Dissipation

–55 to +125

1.25

oC Recommended DC Operating

W Conditions

IOUT

DC Output Current

50

mA

NOTE:

5326 tbl 03

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

Capacitance

(TA = +25°C, f = 1.0MHz)

Symbol

Parameter(1)

Conditions Max. Unit

Symbol

Parameter

Min. Typ. Max. Unit

VDD Supply Voltage

2.375 2.5 2.625 V

Vss Ground

0

0

0

V

VIH Input High Voltage

1.7

____ VDD+0.3(1) V

VIL Input Low Voltage

–0.3(2)

____

0.7

V

NOTES:

5326 tbl 05

1. VIH (max) = VDD + 1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once

per cycle.

2. VIL (min) = -1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once per cycle.

CIN Input Capacitance

VIN = 3dV

6 pF

CI/O I/O Capacitance

VOUT = 3dV

7 pF

NOTE:

5326 tbl 06

1. This parameter is guaranteed by device characterization, but not production tested.

DC Electrical Characteristics

(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)

IDT71T016SA

Symbol

|ILI|

|ILO|

VOL

VOH

Parameter

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Test Condition

VDD = Max., VIN = VSS to VDD

VDD = Max., CS = VIH, VOUT = VSS to VDD

IOL = 2.0mA, VDD = Min.

IOH = 2.0mA, VDD = Min.

DC Electrical Characteristics(1,2)

(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)

Min.

___

___

___

1.7

Max.

Unit

5

µA

5

µA

0.7

V

___

V

5326 tbl 07

Symbol

Parameter

71T016SA10 71T016SA12 71T016SA15 71T016SA20

Com'l Com'l Ind Com'l Ind Com'l Ind Unit

ICC

Dynamic Operating Current

CS < VLC, Outputs Open, VDD = Max., f = fMAX(3)

Max.

Typ.(4)

160

90

150 160 130 130 120 120

mA

85

____

80

____

80

____

ISB

Dynamic Standby Power Supply Current

CS > VHC, Outputs Open, VDD = Max., f = fMAX(3)

45

40

45

35

35

30

30 mA

ISB1

Full Standby Power Supply Current (static)

CS > VHC, Outputs Open, VDD = Max., f = 0(3)

10

15

15

15

15

15

15 mA

NOTES:

5326 tbl 8

1. All values are maximum guaranteed values.

2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).

3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .

4. Typical values are measured at 2.5V, 25°C and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production

tested.

6.432

Share Link: