IRF5805PBF データシートの表示（PDF） - International Rectifier
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IRF5805PBF Datasheet PDF : 9 Pages
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IRF5805PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
-30 ––– ––– V VGS = 0V, ID = -250µA
––– 0.02 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.098
––– 0.165
Ω
VGS = -10V, ID = -3.8A
VGS = -4.5V, ID = -3.0A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-1.0 ––– -2.5 V VDS = VGS, ID = -250µA
3.5 ––– ––– S VDS = -10V, ID = -3.8A
IDSS
Drain-to-Source Leakage Current
––– ––– -15
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 11 17
ID = -3.8A
Qgs
Gate-to-Source Charge
––– 2.3 ––– nC VDS = -15V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– 1.5 –––
––– 11 17
VGS = -10V
VDD = -15V, VGS = -10V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 14 21 ns ID = -1.0A
––– 90 135
RG = 6.0Ω
––– 49 74
RD = 15Ω
Ciss
Input Capacitance
––– 511 –––
VGS = 0V
Coss
Output Capacitance
––– 79 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 50 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
-2.0
showing the
A integral reverse
G
-15
p-n junction diode.
S
––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V
––– 19 29
––– 16 24
ns TJ = 25°C, IF = -2.0A
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board, t ≤ 10sec.
2
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