IRF5805PBF データシートの表示（PDF） - International Rectifier

部品番号

コンポーネント説明

メーカー

IRF5805PBF

HEXFET® Power MOSFET

International Rectifier 

IRF5805PbF

800

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

600

Coss = Cds + Cgd

Ciss

400

200

0

1

Coss

Crss

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

16 ID = -3.8A

12

VDS=-24V

VDS=-15V

8

4

0

0

2

4

6

8 10 12 14

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25°C

0.1

0.0

V GS = 0 V

0.5 1.0 1.5 2.0 2.5 3.0

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1

1ms

TC = 25 °C

TJ = 150 °C

Single Pulse

0.1

0.1

1

10ms

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

www.irf.com

Share Link: