IRFM214B データシートの表示（PDF） - Fairchild Semiconductor

部品番号

コンポーネント説明

メーカー

IRFM214B

250V N-Channel MOSFET

Fairchild Semiconductor 

November 2001

IRFM214B

250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters and

switch mode power supplies.

Features

• 0.64A, 250V, RDS(on) = 2.0Ω @VGS = 10 V

• Low gate charge ( typical 8.1 nC)

• Low Crss ( typical 7.5 pF)

• Fast switching

• Improved dv/dt capability

D

S

G SOT-223

IRFM Series

D

!

"

!"

G!

"

"

!

S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 70°C)

Drain Current - Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

RθJA

Thermal Resistance, Junction-to-Ambient *

* When mounted on the minimum pad size recommended (PCB Mount)

IRFM214B

250

0.64

0.51

5.0

± 30

45

0.64

0.21

5.5

2.1

0.017

-55 to +150

300

Typ

Max

--

60

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

©2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

Share Link: