IRF1324S-7PPBF データシートの表示（PDF） - Infineon Technologies
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IRF1324S-7PPBF Datasheet PDF : 10 Pages
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Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRF1324S-7PPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
24V
0.8m
1.0m
429A
240A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
G
Gate
D2Pak 7 Pin
D
Drain
S
Source
Base Part Number
IRF1324S-7PPbF
Package Type
D2Pak 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy (Thermally Limited)
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Max.
429
303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
230
mJ
See Fig.14,15, 18a, 18b
A
mJ
Typ.
–––
–––
Max.
0.50
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-15
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