MCR12N データシートの表示（PDF） - Digitron Semiconductors

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MCR12N

SILICON CONTROLLED RECTIFIERS

Digitron Semiconductors 

DIGITRON SEMICONDUCTORS

MCR12D, MCR12M, MCR12N

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage(1)

Peak repetitive reverse voltage

(TJ = -40 to +125°C)

MCR12D

MCR12M

MCR12N

VDRM

VRRM

V

400

600

800

On-state RMS current (all conduction angles)

IT(RMS)

12

A

Peak non-repetitive surge current

(one half-cycle, sine wave, 60Hz, TJ = 125°C)

Circuit fusing consideration (t = 8.3ms)

ITSM

100

A

I2t

41

A2s

Peak gate power (pulse width ≤ 1.0µs, TC = 80°C)

PGM

5

W

Average gate power (t = 8.3ms, TC = 80°C)

Peak gate current (pulse width ≤ 1.0µs, TC = 80°C)

Operating temperature range

PG(AV)

0.5

W

IGM

2

A

TJ

-40 to +125

°C

Storage temperature range

Tstg

-40 to +150

°C

Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Maximum lead temperature for soldering

purposes 1/8” from case for 10s

Symbol

RӨJC

RӨJA

TL

Maximum

2.0

62.5

260

Unit

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Peak forward blocking current

Peak reverse blocking current

(VAK = Rated VDRM or VRRM, gate open)

TJ = 25°C

TJ = 125°C

ON CHARACTERISTICS

IDRM,

IRRM

Peak on-state voltage*

(ITM = 24A)

VTM

Gate trigger current (continuous dc)

(VD = 12V, RL = 100Ω)

IGT

Gate trigger voltage (continuous dc)

(VD = 12V, RL = 100Ω)

VGT

Holding current

(VD = 12V)

IH

DYNAMIC CHARACTERISTICS

Critical rate of rise of off-state voltage

(VD = rated VDRM, exponential waveform, gate open, TJ = 25°C)

* Pulse width ≤ 2.0ms, duty cycle ≤ 2%.

dv/dt

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

Min

Typ

Max

Unit

mA

-

-

0.01

-

-

2.0

V

-

-

2.2

mA

2.0

7.0

20

V

0.5

0.65

1.0

mA

4.0

25

40

V/µs

50

200

-

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130108

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