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RMPA2451B-58 データシートの表示(PDF) - Raytheon Company

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RMPA2451B-58
Raytheon
Raytheon Company Raytheon
RMPA2451B-58 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RMPA2451B-58
2.4-2.5 GHz GaAs MMIC
Power Amplifier
PRODUCT INFORMATION
Test Procedure
for the
evaluation board
(RMPA2451B-58-TB)
It is important that the following points be noted prior to testing; Pin designations are as shown in Figure 2.
Vgg1 and Vgg2 are the negative Gate bias voltages applied at the pins of the evaluation test board.
Vdd1 and Vdd2 are the positive Drain bias voltages applied at the pins of the evaluation test board.
Vg1 and Vg2 are the negative Gate bias voltages applied at the pins of the package.
Vd1 and Vd2 are the positive Drain bias voltages applied at the pins of the package.
CAUTION: LOSS OF GATE VOLTAGE (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE PRESENT MAY
DAMAGE THE AMPLIFIER.
The following sequence of procedures must be followed to properly test the amplifier:
Step 1: Turn the RF power OFF.
Step 2: Use the GND terminals of the evaluation board
for the ground of the DC supplies.
Step 3: Apply a nominal voltage of approximately -1.5V
to both Vgg1 and Vgg2 terminals.
Step 4: Apply a nominal voltage of +5.0V to the Vdd
terminals. Adjust Vgg1 to give a first stage
quiescent Drain current, Id1 of 60mA. Adjust
Vgg2 to provide a second stage quiescent Drain
current, Idd2, of 340 mA.
Step 5: Apply an RF signal within the ISM frequency
range (2.4 - 2.5 GHz) at an initial input power
level of -10 dBm.
Step 6: To perform intermodulation product
measurements, a second RF signal generator
with a frequency difference of 1 MHz is
required, along with an appropriate power
combiner. The test configuration should
allow this additional generator to provide the
same input power level as the first generator
into the device. Intermodulation readings
may then be made at the required total
output power levels.
Step 7: To operate at lower quiescent Drain currents,
increase the magnitudes of Vgg1 and Vgg2 as
required, alternatively to operate at higher
quiescent Drain currents, the magnitudes of
Vgg1 and Vgg2 should be decreased
accordingly.
Step 8: When turning the amplifier OFF, the power-
up sequence should be reversed.
Figure 3
Schematic of a
recommended DC bias/
RF matching circuit
Vd1
C2
C1
C3
RF Input
L2
Vg1
C2
Raytheon
RMPA2451B
PPYYWWX
C1
C1
C3
L1
C1
RF Output
C4
Vd2
C2
Vg2
C2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
Revised December 7, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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