RMLA3565-58(2001) データシートの表示（PDF） - Raytheon Company
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RMLA3565-58 Datasheet PDF : 5 Pages
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RMLA3565-58
Wideband Low Noise MMIC Amplifier
PRELIMINARY INFORMATION
Description
The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following
specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no
external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide low noise,
high linearity and low current..
Features
18.0 dB Gain
1.35 dB Noise Figure
Single Positive Bias
Small Outline Metal Base Quad Plastic Package
Absolute
Maximum
Ratings
Parameter
Positive Drain DC Voltage
RF Input Power (from 50W source)
Drain Current
Case Operating Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance
Symbol
Vdd
PIN(CW)
Idd
Tcase
Tstorage
Tsolder
Value
6.5
0
110
-40 to 100
-40 to 110
220
77.5
Unit
V
dBm
mA
°C
°C
°C
°C/W
Electrical
Characteristics1
Parameter
Frequency Range
Gain (Small Signal)2
Gain Variation vs Temp
Noise Figure3
3.5 - 5 GHz
5 - 6.5 GHz
Min Typ
3.5
17.0 18.0
-0.013
1.7
1.3
Max Unit
6.5 GHz
dB
dB/°C
1.9 dB
1.4 dB
Parameter
Input/Output Return Loss
Power Out, P-1dB
IP3 @ 5.5GHz,-8dBm Out
Idd
Vdd
Min Typ
-10.0
8.0 9.0
21.0
70.0
3.0 4.0
Max Unit
-5.0 dB
dBm
dBm
90.0 mA
6.0 V
www.raytheon.com/micro
Notes:
1. Operated at 25 °C and Vdd=4.0V, 50 Ω system
2. Pin = -20 dBm, Freq 2.5 - 6.5 GHz
3. Data de-embedded from fixture loss
Characteristic performance data and specifications are subject to change without notice.
Revised September 24, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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