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RMLA3565-58 データシートの表示(PDF) - Raytheon Company

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RMLA3565-58
Raytheon
Raytheon Company Raytheon
RMLA3565-58 Datasheet PDF : 4 Pages
1 2 3 4
RMLA3565-58
RF Components Wideband Low Noise MMIC Amplifier
PRODUCT INFORMATION
Description
The Raytheon RF Components RMLA3565-58 is a single bias wideband low noise MMIC amplifier
designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or
external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide
low noise, high linearity, and low current.
Features
! 18.0 dB Gain typical
! 1.4 dB Noise Figure Typical 5.0 -6.5 GHz
! Single Positive Bias
! Small Outline Metal Base Quad Plastic Package
! Internal 50 Matching
(Photo TBS)
Absolute
Ratings
Electrical
Characteristics
(50System,
Vdd = 4 V,
T = +25oC)
Parameter
Positive Drain DC Voltage
RF Input Power (from 50source)
Drain Current
Case Operating Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance
(Channel to Case)
Symbol
Vdd
PIN(CW)
Idd
Tcase
Tstorage
Tsolder
Rjc
Value
6.5
0
130
-35 to 85
-40 to 110
220
8
Unit
V
dBm
mA
°C
°C
°C
°C/W
Parameter
Min Typ
Frequency Range
Gain (Small Signal)1,2
Gain Variation vs Temp
Noise Figure2
3.5 - 5 GHz
5 - 6.5 GHz
3.5
17.0
18.0
0.013
2.0
1.4
Max Unit
6.5 GHz
dB
dB/°C
2.2 dB
1.6 dB
Parameter
Min
Power Out, P-1dB
8.0
IP3 @ 5.5GHz,-8dBm Pout
Idd
Vdd
3.0
Input/Output Return Loss
Typ
9.0
21.0
70
4.0
10.0
Max Unit
dBm
dBm
90 mA
6.0 V
5.0 dB
Notes:
1. Pin = - 20, Vd = 4.0 V, Frequency 3.5 -6.5 Ghz
2. Data de-embedded from fixture loss.
www.raytheonrf.com
Specifications are based on most current or latest revision.
Revised February 6, 2003
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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