SFM9214 データシートの表示（PDF） - Fairchild Semiconductor

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SFM9214

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

FEATURES

ν Avalanche Rugged Technology

ν Rugged Gate Oxide Technology

ν Lower Input Capacitance

ν Improved Gate Charge

ν Extended Safe Operating Area

ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V

ν Lower RDS(ON) : 3.5 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TA=25oC)

Continuous Drain Current (TA=70oC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TA=25oC) *

Linear Derating Factor *

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8＂ from case for 5-seconds

SFM9214

BVDSS = -250 V

RDS(on) = 4.0 Ω

ID = -0.45 A

SOT-223

2

1

3

1. Gate 2. Drain 3. Source

Value

-250

-0.45

-0.3

-3.6

+_ 30

100

-0.45

0.16

-4.8

1.63

0.013

- 55 to +150

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/oC

oC

Thermal Resistance

Symbol

RθJA

Characteristic

Junction-to-Ambient *

Typ.

--

* When mounted on the minimum pad size recommended (PCB Mount).

Max.

77

Units

oC/W

Rev. B1

2001 Fairchild Semiconductor Corporation

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