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SRK2000A データシートの表示(PDF) - STMicroelectronics

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SRK2000A Datasheet PDF : 19 Pages
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Electrical characteristics
SRK2000A
Symbol
Table 5. Electrical characteristics (continued)
Parameter
Test condition
Min. Typ. Max. Unit
Gate drive enable function
VEN_On
Hyst
Enable threshold
Hysteresis
IEN
Bias current
Turn-off threshold selection
Positive-going edge(1)
Below VEN_On
VEN = VEN_On
1.7 1.8 1.9 V
-
45
- mV
-
-
1 µA
VEN-Th
IEN
Selection threshold
Pull-down current
Gate drivers
VCC = VCCOn
0.32 0.36 0.40 V
VEN = VEN_Th, VCC = VCCOn 7
10 13 µA
VGDH Output high voltage
VGDL Output low voltage
Isourcepk
Output source peak
current
IGDsource = 5 mA
11.75 11.9 -
V
IGDsource = 5 mA, VCC = 5 V 4.75 4.9
-
IGDsink = 200 mA
-
0.2
-
V
IGDsink = 200 mA, VCC = 5 V -
0.2
-
-
-
-1
-
A
Isinkpk Output sink peak current -
-
3.5
-
A
tf
Fall time
-
-
18
- ns
tr
Rise time
-
-
40
- ns
VGDclamp Output clamp voltage
IGDsource = 5 mA; VCC = 20 V 12
13
15 V
VGDL_UVLO UVLO saturation
VCC = 0 to VCCon
Isink = 5 mA
-
1
1.3 V
1. Parameters tracking each other.
2.
Finoter rVnCaCl c>la3m0pVZIeDnVeSr1,(2fe_bwmteanysboef
greater
µA).
than
1
µA
because
of
the
possible
current
contribution
of
the
8/19
DocID025407 Rev 3

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