TLMV3100 データシートの表示（PDF） - Vishay Semiconductors
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TLMV3100 Datasheet PDF : 7 Pages
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TLMV3100
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
TLMH3100 ,TLMG3100 ,
Parameter
Reverse voltage per diode
DC forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Test Conditions
IR = 10 mA
Tamb ≤ 60°C
tp ≤ 10 ms
Tamb ≤ 60°C
t≤5s
mounted on PC board
(pad size > 16 mm2)
Symbol
Value
Unit
VR
6
V
IF
30
mA
IFSM
0.5
A
PV
100
mW
Tj
100
°C
Tamb
–40 to +100
°C
Tstg
–55 to +100
°C
Tsd
260
°C
RthJA
400
K/W
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified
High efficiency red (TLMH3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
VR = 6 V
VR = 0, f = 1 MHz
Type Symbol Min Typ Max Unit
IV
2.5 6
mcd
ld
612
625 nm
lp
635
nm
ϕ
±60
deg
VF
2.4 3
V
IR
10 mA
Cj
15
pF
Green (TLMG3100 )
Parameter
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage per diode
Reverse current per diode
Junction capacitance per diode
Test Conditions
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
IF = 10 mA
VR = 6 V
VR = 0, f = 1 MHz
Type Symbol Min Typ Max Unit
IV
2.5 6
mcd
ld
562
575 nm
lp
565
nm
ϕ
±60
deg
VF
2.4 3
V
IR
10 mA
Cj
15
pF
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2 (7)
Document Number 83042
Rev. A1, 04-Feb-99
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