CY62138V(1998) データシートの表示（PDF） - Cypress Semiconductor

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CY62138V
(Rev.:1998)

256K x 8 Static RAM

Cypress Semiconductor 

PRELIMINARY

CY62138V MoBL™

Electrical Characteristics Over the Operating Range (continued)

Parameter

Description

ISB1

Automatic CE

Power-Down Current—

CMOS Inputs

ISB2

Automatic CE

Power-Down Current—

CMOS Inputs

Shaded area contains advanced information.

Capacitance[3]

Test Conditions

CE > VCC − 0.3V,

VIN > VCC − 0.3V or

VIN < 0.3V, f = fMAX

CE > VCC−0.3V

VIN > VCC−0.3V

or VIN < 0.3V, f = 0

L

VCC = LL

3.3V

VCC = LL

2.7V

VCC = LL

2.3V

Min.

Parameter

Description

Test Conditions

CIN

COUT

Input Capacitance

Output Capacitance

TA = 25°C, f = 1 MHz,

VCC = 3.0V

Note:

3. Tested initially and after any design or process changes that may affect these parameters.

CY62138V

Typ.[2]

Max.

100

1

50

1

15

1

12

1

10

Max.

6

8

Unit

µA

µA

µA

µA

µA

Unit

pF

pF

3

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