PN4391 データシートの表示（PDF） - Philips Electronics

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PN4391

N-channel silicon field-effect transistors

Philips Electronics 

Philips Semiconductors

N-channel silicon field-effect transistors

Product specification

PN4391 to 4393

DESCRIPTION

Symmetrical silicon n-channel

junction FETs in plastic TO-92

envelopes. They are intended for

applications such as analog switches,

choppers, commutators etc.

PINNING

1 = gate

2 = source

3 = drain

Note: Drain and source are

interchangeable.

QUICK REFERENCE DATA

Drain-source voltage

Total power dissipation

up to Tamb = 25 °C

Drain current

VDS = 20 V; VGS = 0

Gate-source cut-off voltage

VDS = 20 V; ID = 1 nA

Drain-source on-resistance

ID = 1 mA; VGS = 0

handbook, half1pa2ge

3

d

g

s

MAM042

Fig.1 Simplified outline and symbol, TO-92.

± VDS

Ptot

max.

max.

IDSS

−VGS off

min.

min.

max.

RDS on

max.

40

V

360

mW

PN4391 PN4392 PN4393

50

25

5 mA

4

2

0.5 V

10

5

3V

30

60

100 Ω

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Gate-source voltage

Gate-drain voltage

Forward gate current (DC)

Total power dissipation

± VDS

−VGSO

−VGDO

IG

up to Tamb = 25 °C

Ptot

Storage temperature range

Tstg

Junction temperature

Tj

max.

max.

max.

max.

max.

max.

40

V

40

V

40

V

50

mA

360

mW

−65 to+150

°C

150

°C

April 1989

2

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