Philips Semiconductors
NPN resistor-equipped double transistor
R1 = 10 kΩ, R2 = open
Preliminary specification
PEMH4
FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin
package
• Excellent coplanarity due to straight leads
• Reduces number of components as replacement of two
SC-75/SC-89 packaged transistors
• Reduces required board space
• Reduces pick and place costs.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
ICM
TR1
collector-emitter voltage
peak collector current
NPN
TR2
NPN
R1
bias resistor
MAX. UNIT
50
V
100 mA
−
−
−
−
10
kΩ
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
DESCRIPTION
NPN resistor-equipped double transistor in a SOT666
plastic package.
handbook, ha6lfpage 5
1
2
Top view
4
6
5
4
R1
TR2
TR1
R1
3
1
2
3
MAM453
MARKING
TYPE NUMBER
PEMH4
MARKING CODE
H4
Fig.1 Simplified outline (SOT666) and symbol.
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
2, 5
6, 3
MBK120
1, 4
Fig.2 Equivalent inverter symbol.
2001 Sep 14
2