PMBT2907AYS データシートの表示（PDF） - Nexperia B.V. All rights reserved
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PMBT2907AYS Datasheet PDF : 15 Pages
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Nexperia
PMBT2907AYS
60V, 600 mA, double PNP switching transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IBM
peak base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
-
-
-
-
-
[1]
-
[2]
-
-60 V
-60 V
-5
V
-600 mA
-800 mA
-200 mA
250 mW
300 mW
[1]
-
400 mW
[2]
-
550 mW
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm 2
600
Ptot
(1)
(mW)
aaa-016547
400
(2)
200
0
-75
-25
25
(1) FR4 PCB; mounting pad for collector 1 cm2
(2) FR4 PCB; standard footprint
75
125
175
Tj (°C)
Fig. 1. Per device: Power derating curves SOT363 (SC-88)
PMBT2907AYS
All information provided in this document is subject to legal disclaimers.
Product data sheet
26 June 2015
© Nexperia B.V. 2017. All rights reserved
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