PMBT5551 データシートの表示（PDF） - Nexperia B.V. All rights reserved
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PMBT5551 Datasheet PDF : 8 Pages
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Nexperia
10. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
ICBO
collector-base cut-off
current
VCB = 120 V; IE = 0 A; Tj = 25 °C
VCB = 120 V; Tamb = 100 °C
IEBO
emitter-base cut-off
VEB = 4 V; IC = 0 A
current
hFE
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 10 mA; Tj = 25 °C
VCE = 5 V; IC = 50 mA; Tj = 25 °C
VCEsat
VBEsat
Cc
Ce
fT
NF
collector-emitter
saturation voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
base-emitter saturation IC = 10 mA; IB = 1 mA
voltage
IC = 50 mA; IB = 5 mA
collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz
emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz
transition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz
noise figure
VCE = 5 V; IC = 200 µA; RS = 2 kΩ;
10 Hz ≤ f ≤ 15700 Hz
160
hFE
120
VCE = 5 V
80
PMBT5551
NPN high-voltage transistor
Min Typ Max Unit
-
-
50
nA
-
-
50
µA
-
-
50
nA
80
-
-
80
250 -
30
-
-
-
-
150 mV
-
-
200 mV
-
-
1
V
-
-
1
V
-
-
6
pF
-
-
30
pF
100 300 -
MHz
-
-
8
dB
mgd814
40
0
10- 1
1
VCE = 5 V
Fig. 1. DC current gain; typical values
10
102
103
IC (mA)
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PMBT5551
Product data sheet
All information provided in this document is subject to legal disclaimers.
31 August 2020
© Nexperia B.V. 2020. All rights reserved
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