PSMN030-150B データシートの表示（PDF） - NXP Semiconductors.
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PSMN030-150B Datasheet PDF : 12 Pages
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PSMN030-150B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 13 December 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
DC-to-DC converters
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C
Ptot
total power
dissipation
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A; Tj = 25 °C
on-state resistance
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 55.5 A;
VDS = 120 V; Tj = 25 °C
Min Typ Max Unit
-
-
150 V
-
-
55.5 A
-
-
250 W
-
24 30 mΩ
-
38 50 nC
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