PSMN030-150B データシートの表示（PDF） - NXP Semiconductors.
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PSMN030-150B Datasheet PDF : 12 Pages
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NXP Semiconductors
PSMN030-150B
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain[1]
S
source
D
mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN030-150B
D2PAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
Tmb = 25 °C
Tmb = 100 °C
pulsed; Tmb = 25 °C
Tmb = 25 °C
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; Tmb = 25 °C
EDS(AL)S
IAS
non-repetitive drain-source
avalanche energy
non-repetitive avalanche current
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A;
Vsup ≤ 50 V; unclamped; RGS = 50 Ω;
tp = 100 µs
Vsup ≤ 50 V; VGS = 10 V; Tj(init) = 25 °C;
RGS = 50 Ω; unclamped
PSMN030-150B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
Min Max Unit
-
150 V
-
150 V
-20 20 V
-
55.5 A
-
39 A
-
222 A
-
250 W
-55 175 °C
-55 175 °C
-
55.5 A
-
222 A
-
300 mJ
-
35 A
© NXP B.V. 2010. All rights reserved.
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