PSMN030-150B データシートの表示（PDF） - NXP Semiconductors.
部品番号
コンポーネント説明
メーカー
PSMN030-150B Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
PSMN030-150B
N-channel TrenchMOS SiliconMAX standard level FET
100
Pder
(%)
80
60
40
20
0
0
003aaf138
50
100
150
200
Tmb (°C)
100
ID
(%)
80
60
40
20
0
0
003aaf139
50
100
150
200
Tmb (°C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
103
IDM
(A)
102
RDS(on) = VDS / ID
003aaf140
tp = 10 μs
100 μs
10
1 ms
D.C.
10 ms
100 ms
1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
102
lAS
(A)
10
003aaf155
25 °C
Tj prior to avalanche = 150 °C
1
10−3
10−2
10−1
1
10
tAV (ms)
unclamped inductive load
Fig 4. Single-shot avalanche rating; avalanche
current as a function of avalanche period
PSMN030-150B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
3 of 12
Share Link: 