PSMN030-150B データシートの表示（PDF） - NXP Semiconductors.
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PSMN030-150B Datasheet PDF : 12 Pages
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NXP Semiconductors
PSMN030-150B
N-channel TrenchMOS SiliconMAX standard level FET
10−1
lD
(A)
10−2
003aaf149
10−3
10−4
minimum
typical maximum
10−5
10−6
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 12. Sub-threshold drain current as a function of
gate-source voltage
16
VGS
(V)
12
8
003aaf152
VDD = 30 V
VDD = 120 V
4
0
0
40
80
120
160
QG (nC)
Tj = 25 °C; ID = 55.5 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values
104
C
(pF)
103
003aaf151
Ciss
Coss
Crss
102
10−1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
50
IF
(A)
40
003aaf154
30
20
Tj = 175 °C
Tj = 25 °C
10
0
0
0.4
0.8
1.2
VSDS (V)
VGS = 0 V
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
PSMN030-150B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
© NXP B.V. 2010. All rights reserved.
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