PMXB65ENE データシートの表示（PDF） - Nexperia B.V. All rights reserved
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PMXB65ENE Datasheet PDF : 15 Pages
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Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max
VDS
drain-source voltage
Tj = 25 °C
-
30
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
-20 20
[1]
-
3.2
[1]
-
2.5
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
12.8
Ptot
total power dissipation Tamb = 25 °C
[2]
-
0.4
[1]
-
1.07
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Tsp = 25 °C
Tamb = 25 °C
-
8.33
-55 150
-55 150
-65 150
[1]
-
0.9
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
V
A
A
A
W
W
W
°C
°C
°C
A
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB65ENE
Product data sheet
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3 November 2016
© Nexperia B.V. 2017. All rights reserved
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