1014-2 データシートの表示（PDF） - Microsemi Corporation
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1014-2 Datasheet PDF : 1 Pages
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1014 - 2
2 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of
Class C, RF Output Power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input prematching and utilizes gold metalization and diffused ballasting to
provide high reliagility and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
9.7 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
50 Volts
3.5 Volts
0.5 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150oC
+200oC
CASE OUTLINE
55LT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F =1000-1400 MHz
Vcb = 28 Volts
As Above
Pout = 2 Watts
MIN
2
7.5
TYP
45
MAX UNITS
Watt
0.35
Watt
dB
%
10:1
BVces
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown Ic = 20 mA
50
Emitter to Base Breakdown
Ie = 5 mA
3.5
Collector to Base Current
Vcb = 28 Volts
Current Gain
Vce = 28 V, Ic = 100 mA
10
Output Capacitance
Thermal Resistance
Vcb = 25 V, f = 1 MHz
Tc = 25oC
Rev B, Jan 2009
Volts
Volts
0.5
mA
100
4.5
pF
18
oC/W
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.microsemi.com or contact our factory direct.
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