SM3017NSU データシートの表示（PDF） - Unspecified
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SM3017NSU Datasheet PDF : 12 Pages
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SM3017NSU
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
TJ Maximum Junction Temperature
150
°C
TSTG Storage Temperature Range
-55 to 150
°C
IS Diode Continuous Forward Current
30
A
IDP 300μs Pulse Drain Current Tested
TC=25°C
TC=100°C
120
A
85
ID Continuous Drain Current
TC=25°C
TC=100°C
68
A
40
PD Maximum Power Dissipation
TC=25°C
TC=100°C
50
W
20
RqJC Thermal Resistance-Junction to Case
Steady State
2.5
°C/W
RqJA Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
20
°C/W
45
IAS a Avalanche Current, Single pulse (L=0.5mH)
14
A
EAS a Avalanche Energy, Single pulse (L=0.5mH)
50
mJ
Note a：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) b Drain-Source On-state Resistance
Gfs Forward Transconductance
Test Conditions
Min.
VGS=0V, IDS=250mA
30
VDS=24V, VGS=0V
-
TJ=85°C
-
VDS=VGS, IDS=250mA
1.5
VGS=±20V, VDS=0V
-
VGS=10V, IDS=30A
-
TJ=125°C -
VGS=4.5V, IDS=15A
-
VDS=5V, IDS=30A
-
Typ. Max. Unit
-
-
V
-
1
-
30
mA
1.8 2.5 V
-
10 mA
5.9 7.2
8.9
- mW
7.6 9.8
70
-
S
Copyright ã Sinopower Semiconductor, Inc.
2
Rev. A.2 - December, 2013
www.sinopowersemi.com
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