SM3017NSU データシートの表示（PDF） - Unspecified

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SM3017NSU

N-Channel Enhancement Mode MOSFET

Unspecified 

SM3017NSU

®

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Diode Characteristics

VSD b Diode Forward Voltage

trr Reverse Recovery Time

ta Charge Time

tb Discharge Time

Qrr Reverse Recovery Charge

Dynamic Characteristics c

ISD=15A, VGS=0V

IDS=15A, dlSD/dt=100A/ms

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

tf Turn-off Fall Time

Gate Charge Characteristics c

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=15V,

Frequency=1.0MHz

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=6W

Qg Total Gate Charge

Qg Total Gate Charge

Qgth Threshold Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=15V, VGS=4.5V,

IDS=30A

VDS=15V, VGS=10V,

IDS=30A

Note b：Pulse test ; pulse width£300ms, duty cycle£2%.

Note c：Guaranteed by design, not subject to production testing.

Min.

-

-

-

-

-

0.7

980

158

90

-

-

-

-

-

-

-

-

-

Typ.

0.85

15

8

7

8

1.2

1180

190

115

14

12

30

10

8

20

1.4

2.3

4.5

Max. Unit

1.1 V

-

-

ns

-

-

nC

1.7 W

1400

228 pF

140

20

18

ns

45

15

11

24

1.7 nC

2.8

5

Copyright ã Sinopower Semiconductor, Inc.

3

Rev. A.2 - December, 2013

www.sinopowersemi.com

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