3SK319YB-TL-E データシートの表示（PDF） - Renesas Electronics

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3SK319YB-TL-E

Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

Renesas Electronics 

3SK319

Silicon N-Channel Dual Gate MOS FET

UHF RF Amplifier

Features

• Low noise characteristics;

(NF= 1.4 dB typ. at f= 900 MHz)

• Excellent cross modulation characteristics

• Capable low voltage operation; +B= 5V

Outline

RENESAS Package code: PLSP0004ZA-A

(Package name: MPAK-4)

Note: Marking is “YB–”.

2

3

1

4

REJ03G0820-0200

(Previous ADE-208-602)

Rev.2.00

Aug.10.2005

1. Source

2. Gate1

3. Gate2

4. Drain

Rev.2.00 Aug 10, 2005 page 1 of 7

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