C4957-T1 データシートの表示（PDF） - Renesas Electronics

部品番号

コンポーネント説明

メーカー

C4957-T1

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

Renesas Electronics 

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4957

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN MINIMOLD

FEATURES

• Low Noise, High Gain

• Low Voltage Operation

• Low Reverse Transfer Capacitance

Cre = 0.3 pF TYP.

• 4-pin minimold Package

ORDERING INFORMATION

Part Number

2SC4957

2SC4957-T1

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9

V

Collector to Emitter Voltage

VCEO

6

V

Emitter to Base Voltage

VEBO

2

V

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

IC

P Note

tot

Tj

Tstg

30

180

150

−65 to +150

mA

mW

°C

°C

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10520EJ01V0DS (1st edition)

(Previous No. P10379EJ2V0DS00)

Date Published September 2004 CP(K)

Printed in Japan

The mark  shows major revised points.

© NEC Compound Semiconductor Devices, Ltd. 1993, 2004

Share Link: