C4957-T1 データシートの表示（PDF） - Renesas Electronics

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C4957-T1

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

Renesas Electronics 

2SC4957

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

12

f = 2 GHZ

VCE = 5 V

VCE = 3 V

10

NOISE FIGURE vs.

COLLECTOR CURRENT

4

f = 2 GHZ

VCE = 3 V

3

8

2

VCE = 1 V

6

1

4

1

2

5

10

20

50

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

0

0.5 1 2

5 10 20

50

Collector Current IC (mA)

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

4

Data Sheet PU10520EJ01V0DS

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