VS-12TTS08-M3 データシートの表示（PDF） - Vishay Semiconductors
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VS-12TTS08-M3 Datasheet PDF : 7 Pages
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110
At any rated load condition and with
100
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
90
at 50 Hz 0.0100 s
80
70
60
50
40
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
VS-12TTS08-M3
Vishay Semiconductors
120
Maximum non-repetitive surge current
110
vs. pulse train duration.
Initial TJ = TJ max.
100
No voltage reapplied
Rated Vrrm reapplied
90
80
70
60
50
40
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
0.01
0.0001
100
TJ = 25 °C
10
TJ = 125 °C
1
0.5
1 1.5
2
2.5
3
3.5
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Steady state value
(DC operation)
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 21-Aug-17
4
Document Number: 96286
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