BAR50-02V(2009) データシートの表示（PDF） - Infineon Technologies

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BAR50-02V
(Rev.:2009)

Silicon PIN Diodes

Infineon Technologies 

BAR50...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

AC Characteristics

min. typ. max.

Diode capacitance

CT

VR = 1 V, f = 1 MHz

VR = 5 V, f = 1 MHz

VR = 0 V, f = 100 MHz

VR = 0 V, f = 1...1.8 GHz, BAR50-02L

VR = 0 V, f = 1...1.8 GHz, all other

pF

- 0.24 0.5

-

0.2 0.4

-

0.2

-

-

0.1

-

- 0.15 -

Reverse parallel resistance

VR = 0 V, f = 100 MHz

VR = 0 V, f = 1 GHz

VR = 0 V, f = 1.8 GHz

RP

kΩ

-

25

-

-

6

-

-

5

-

Forward resistance

rf

IF = 0.5 mA, f = 100 MHz

IF = 1 mA, f = 100 MHz

IF = 10 mA, f = 100 MHz

Charge carrier life time

τ rr

IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,

RL = 100 Ω

I-region width

WI

Insertion loss1)

IL

IF = 3 mA, f = 1.8 GHz

IF = 5 mA, f = 1.8 GHz

IF = 10 mA, f = 1.8 GHz

Isolation1)

ISO

VR = 0 V, f = 0.9 GHz

VR = 0 V, f = 1.8 GHz

VR = 0 V, f = 2.45 GHz

VR = 0 V, f = 5.6 GHz

Ω

-

25 40

- 16.5 25

-

3 4.5

- 1100 - ns

-

56

- µm

dB

- 0.56 -

-

0.4

-

- 0.27 -

- 24.5 -

-

20

-

-

18

-

-

12

-

1BAR50-02L in series configuration, Z = 50 Ω

3

2009-05-13

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