CMT2210LW データシートの表示（PDF） - Unspecified
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CMT2210LW Datasheet PDF : 20 Pages
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CMT2210LW
1. Electrical Characteristics
VDD = 3.3 V, TOP = 25 ℃, FRF = 433.92 MHz, sensitivities are measured in receiving a PN9 sequence and matching to 50 Ω
impedance, with the BER of 0.1%. All measurements are performed using the board CMT2210LW-EM V1.0, unless otherwise
noted.
1.1 Recommended Operation Conditions
Table 2. Recommended Operation Conditions
Parameter
Operation Voltage Supply
Operation Temperature
Supply Voltage Slew Rate
Symbol
VDD
TOP
Conditions
Min
Typ
1.8
-40
1
Max
Unit
3.6
V
85
℃
mV/us
1.2 Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings[1]
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
Interface Voltage
Junction Temperature
Storage Temperature
Soldering Temperature
ESD Rating[2]
VDD
VIN
TJ
TSTG
TSDR
Lasts at least 30 seconds
Human Body Model (HBM)
-0.3
3.6
V
-0.3
VDD + 0.3
V
-40
125
℃
-50
150
℃
255
℃
-2
2
kV
Latch-up Current
@ 85 ℃
-100
100
mA
Notes:
[1]. Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
[2]. The CMT2210LW is high-performance RF integrated circuits with VCON/P pins having an ESD rating < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
Caution! ESD sensitive device. Precaution should be used when handling the device in order
to prevent permanent damage.
Rev 0.8 | Page 5/20
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