NCE65T900 データシートの表示（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd
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NCE65T900 Datasheet PDF : 9 Pages
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NCE65T900D，NCE65T900, NCE65T900F
LCE N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
650 V
RDS(ON)TYP 750
mΩ
ID
5
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
LCE65T900D
TO-263
NCE65T900D
LCE65T900
TO-220
NCE65T900
LCE65T900F
TO-220F
NCE65T900F
TO-263 TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
(Note 1)
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
(Note2)
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65T900
NCE65T900F
NCE65T900D
650
±30
5
5*
3
3*
20
20*
46
29
0.37
0.23
52
0.9
0.14
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Rev :01.06.2018
1/9
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