LH8050QLT1G データシートの表示（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd

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LH8050QLT1G

General Purpose Transistors NPN Silicon

Shanghai Leiditech Electronic Technology Co., Ltd 

LH8050PLTIG Series

S-LH8050PLTIG Series

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Characteristic

Symbol

Min

Collector-Emitter Breakdown Voltage

(IC=2.0mA,IB=0)

V(BR)CEO

50

Emitter-Base Breakdown Voltage

(IE=100µΑ,IC =0)

V(BR)EBO

6

Collector-Base Breakdown Voltage

(IC=100µΑ,IE =0 )

V(BR)CBO

50

Collector Cutoff Current (VCB=35V,I E=0)

ICBO

–

Emitter Cutoff Current (VEB=6V,I C=0)

IEBO

–

Base-Emitter Voltage (VCE=1V,I C=10mA)

VBE

–

DC Current Gain

IC=100mA,VCE=1V

DC Current Gain

IC=800mA,VCE=1V

hFE *

100

hFE

40

Collector-Emitter Saturation Voltage

(IC=800mA IB=80mA)

VCE(S)

-

Typ

–

–

–

–

–

0.66

-

-

-

Max

–

–

–

100

100

1

Unit

V

V

V

nA

nA

V

320

-

0.5

V

NOTE :

*

P

Q

hF E

100~200

160~320

Rev :01.06.2018

2/4

www.leiditech.com

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