IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
105
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
104
Crss = Cgd
Coss = Cds + Cgd
103
Ciss
102
Coss
10
Crss
1
1
10
102
103
91046_05
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
102
10
TJ = 150 °C
1
TJ = 25 °C
VGS = 0 V
0.1
0.4
0.6
0.8
1.0
1.2
91046_07
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 5.5 A
16
VDS = 320 V
VDS = 200 V
12
VDS = 80 V
8
4
0
0
91046_06
For test circuit
see figure 13
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
102
Operation in this area limited
by RDS(on)
10 µs
10
100 µs
1
0.1
10
91046_08
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
102
103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91046
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000