SIHF730ASTRL-GE3 データシートの表示（PDF） - Vishay Semiconductors

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SIHF730ASTRL-GE3

Power MOSFET

Vishay Semiconductors 

IRF730AS, SiHF730AS, IRF730AL, SiHF730AL

Vishay Siliconix

700

ID

600

Top 2.5 A

3.5 A

Bottom 5.5 A

500

400

300

200

100

0

25

50

75

100

125

150

91046_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

610

600

590

580

570

560

550

540

0.0 1.0 2.0 3.0 4.0 5.0 6.0

91046_12d

IAV, Avalanche Current (A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91046

S11-1048-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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