BAS16HYFHT116 データシートの表示（PDF） - ROHM Semiconductor
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BAS16HYFHT116 Datasheet PDF : 8 Pages
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BAS16HYFH
Switching Diode (High speed switching)
(AEC-Q101 qualified) Data sheet
●Outline
VRM
100
V
IFM
500
mA
IF
215
mA
IFSM
4000
mA
●Features
High reliability
Small mold type
●Inner Circuit
●Application
High speed switching
●Structure
Epitaxial planar
●Absolute Maximum Ratings (Ta = 25ºC)
Parameter
Symbol
Repetitive peak reverse voltage
VRM
Reverse voltage
VR
Power dissipation
PD
Repetitive peak reverse forward current IFM
Peak forward surge current
IFSM
Forward current
IF
Junction temperature
Tj
Storage temperature
Tstg
※Caution：static electricity
●Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Quantity(pcs)
3000
Taping Code
T116
Marking
D9U
Conditions
-
Limits
Unit
100
V
-
80
V
Ta≦25℃
250
mW
-
500
mA
t=1μs
4000
mA
-
215
mA
-
125
mA
-
150
℃
-
-65 ～ 150
℃
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2020/05/27_Rev.001
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