HM100N02 データシートの表示（PDF） - Unspecified

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HM100N02

High density cell design for ultra low Rdson

Unspecified 

HM100N02

Description

The HM100N02 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =20V,ID =100A

RDS(ON) <5.5mΩ @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Schematic diagram

HM100N02

Marking and pin Assignment

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

HM100N02

HM100N02

TO-220-3L

Reel Size

-

Tape width

-

Quantity

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Drain Current-Continuous

Drain Current-Continuous(TC=100℃)

ID

ID (100℃)

Pulsed Drain Current

IDM

Maximum Power Dissipation

PD

Derating factor

Single pulse avalanche energy (Note 5)

EAS

Operating Junction and Storage Temperature Range

TJ,TSTG

Limit

20

±12

100

70

350

60

0.48

200

-55 To 150

Unit

V

V

A

A

A

W

W/℃

mJ

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case(Note 2)

RθJC

2.1

℃/W

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