HM100P03 データシートの表示（PDF） - Unspecified
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HM100P03 Datasheet PDF : 6 Pages
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
HM100P03
IGSS
VGS=±20V,VDS=0V
-
- ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-30A
VDS=-10V,ID=-30A
-1.0 -1.5 -2.5
V
-
6
9
mΩ
30 -
-
S
Clss
- 3960 -
PF
VDS=-15V,VGS=0V,
Coss
- 486
-
PF
F=1.0MHz
Crss
- 268
-
PF
td(on)
-
20
-
nS
tr
VDD=-15V, ID=-20A,
-
13
-
nS
td(off)
VGS=-10V,RGEN=3Ω
-
55
-
nS
tf
-
21
-
nS
Qg
-
65
-
nC
Qgs
VDS=-15V,ID=-20A,VGS=-10V -
12
-
nC
Qgd
-
14
-
nC
VSD
VGS=0V,IS=-50A
-
-
-1.2
V
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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