CEM4311 データシートの表示（PDF） - Chino-Excel Technology

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CEM4311

P-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CEM4311

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -9.3A, RDS(ON) = 18mΩ @VGS = -10V.

RDS(ON) = 30mΩ @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

DD D D

8

7

6

5

SO-8

1

1

2

3

4

S SSG

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

VDS

-30

VGS

±20

Drain Current-Continuous

Drain Current-Pulsed a

ID

-9.3

IDM

-37

Maximum Power Dissipation

PD

2.5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Ambient b

Symbol

RθJA

Limit

50

Units

V

V

A

A

W

C

Units

C/W

Specification and data are subject to change without notice .

Rev 2. 2010.Aug

http://www.cetsemi.com

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